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IRF7665S2TR1PBF

IRF7665S2TR1PBF

IRF7665S2TR1PBF

MOSFET N-CH 100V 4.1A DIRECTFET

compliant

IRF7665S2TR1PBF Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 515 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET SB
Package / Case DirectFET™ Isometric SB
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