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RCD075N20TL

RCD075N20TL

RCD075N20TL

Rohm Semiconductor

MOSFET N-CH 200V 7.5A CPT3

compliant

RCD075N20TL Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.49000 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 325mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id 5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 755 pF @ 25 V
FET Feature -
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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