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IRF6655TR1PBF

IRF6655TR1PBF

IRF6655TR1PBF

MOSFET N-CH 100V 4.2A DIRECTFET

compliant

IRF6655TR1PBF Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 11.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SH
Package / Case DirectFET™ Isometric SH
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