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IRF6691TR1

IRF6691TR1

IRF6691TR1

MOSFET N-CH 20V 32A DIRECTFET

SOT-23

non-compliant

IRF6691TR1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT
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