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IPB12CNE8N G

IPB12CNE8N G

IPB12CNE8N G

MOSFET N-CH 85V 67A D2PAK

SOT-23

non-compliant

IPB12CNE8N G Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 40 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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