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RJK2055DPA-00#J0

RJK2055DPA-00#J0

RJK2055DPA-00#J0

MOSFET N-CH 200V 20A 8WPAK

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RJK2055DPA-00#J0 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK (3)
Package / Case 8-PowerWDFN
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