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IPT65R195G7XTMA1

IPT65R195G7XTMA1

IPT65R195G7XTMA1

MOSFET N-CH 650V 14A 8HSOF

SOT-23

non-compliant

IPT65R195G7XTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $1.70806 -
6,000 $1.64384 -
1732 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 195mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
FET Feature -
Power Dissipation (Max) 97W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-2
Package / Case 8-PowerSFN
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