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SISH617DN-T1-GE3

SISH617DN-T1-GE3

SISH617DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 13.9A/35A PPAK

SOT-23

non-compliant

SISH617DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.41189 -
6,000 $0.38516 -
15,000 $0.37179 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.3mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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