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Name | Value |
---|---|
Product Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 56.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251A |
Package / Case | TO-251-3 Stub Leads, IPak |
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