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IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

MOSFET N-CH 100V 43A TO262-3

compliant

IPI180N10N3GXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $0.99024 $495.12
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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