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IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

MOSFET N-CH 100V 43A TO262-3

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IPI180N10N3GXKSA1 Pricing & Ordering

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500 $0.99024 $495.12
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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