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SIRA20BDP-T1-GE3

SIRA20BDP-T1-GE3

SIRA20BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 82A/335A PPAK

non-compliant

SIRA20BDP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.72000 $1.72
500 $1.7028 $851.4
1000 $1.6856 $1685.6
1500 $1.6684 $2502.6
2000 $1.6512 $3302.4
2500 $1.634 $4085
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 82A (Ta), 335A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 9950 pF @ 15 V
FET Feature -
Power Dissipation (Max) 6.3W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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