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RM35P30LD

RM35P30LD

RM35P30LD

Rectron USA

MOSFET P-CHANNEL 30V 35A TO252-2

non-compliant

RM35P30LD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.14500 $0.145
500 $0.14355 $71.775
1000 $0.1421 $142.1
1500 $0.14065 $210.975
2000 $0.1392 $278.4
2500 $0.13775 $344.375
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1345 pF @ 15 V
FET Feature -
Power Dissipation (Max) 34.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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