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IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

MOSFET N-CH 650V 17.5A D2PAK

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IPB65R190CFDAATMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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