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CSD19536KTT

CSD19536KTT

CSD19536KTT

Texas Instruments

MOSFET N-CH 100V 200A DDPAK

non-compliant

CSD19536KTT Pricing & Ordering

Quantity Unit Price Ext. Price
500 $2.89504 $1447.52
1,000 $2.45485 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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