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STL8N10F7

STL8N10F7

STL8N10F7

STMicroelectronics

MOSFET N-CH 100V POWERFLAT

compliant

STL8N10F7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.02008 -
6,000 $0.98658 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN
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