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SIR800ADP-T1-RE3

SIR800ADP-T1-RE3

SIR800ADP-T1-RE3

Vishay Siliconix

MOSFET N-CH 20V 50.2A/177A PPAK

non-compliant

SIR800ADP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.37562 -
6,000 $0.34972 -
15,000 $0.33677 -
30,000 $0.32970 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 50.2A (Ta), 177A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.35mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) +12V, -8V
Input Capacitance (Ciss) (Max) @ Vds 3415 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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