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IPB240N04S4R9ATMA1

IPB240N04S4R9ATMA1

IPB240N04S4R9ATMA1

MOSFET N-CH 40V 240A TO263-7

non-compliant

IPB240N04S4R9ATMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.87mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 290 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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