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RF4E070BNTR

RF4E070BNTR

RF4E070BNTR

Rohm Semiconductor

MOSFET N-CH 30V 7A HUML2020L8

non-compliant

RF4E070BNTR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.35280 -
860 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package HUML2020L8
Package / Case 8-PowerUDFN
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