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SCTH40N120G2V7AG

SCTH40N120G2V7AG

SCTH40N120G2V7AG

STMicroelectronics

SICFET N-CH 650V 33A H2PAK-7

non-compliant

SCTH40N120G2V7AG Pricing & Ordering

Quantity Unit Price Ext. Price
1 $22.35000 $22.35
500 $22.1265 $11063.25
1000 $21.903 $21903
1500 $21.6795 $32519.25
2000 $21.456 $42912
2500 $21.2325 $53081.25
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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