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IPB080N03LGATMA1

IPB080N03LGATMA1

IPB080N03LGATMA1

MOSFET N-CH 30V 50A D2PAK

non-compliant

IPB080N03LGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.56793 -
2,000 $0.53007 -
5,000 $0.50356 -
10,000 $0.48463 -
15323 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 15 V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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