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NTMT190N65S3H

NTMT190N65S3H

NTMT190N65S3H

onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

compliant

NTMT190N65S3H Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.76000 $4.76
500 $4.7124 $2356.2
1000 $4.6648 $4664.8
1500 $4.6172 $6925.8
2000 $4.5696 $9139.2
2500 $4.522 $11305
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 400 V
FET Feature -
Power Dissipation (Max) 129W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-TDFN (8x8)
Package / Case 4-PowerTSFN
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