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NTMT190N65S3H

NTMT190N65S3H

NTMT190N65S3H

onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

non-compliant

NTMT190N65S3H Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.76000 $4.76
500 $4.7124 $2356.2
1000 $4.6648 $4664.8
1500 $4.6172 $6925.8
2000 $4.5696 $9139.2
2500 $4.522 $11305
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 400 V
FET Feature -
Power Dissipation (Max) 129W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-TDFN (8x8)
Package / Case 4-PowerTSFN
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