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RQ6E085BNTCR

RQ6E085BNTCR

RQ6E085BNTCR

Rohm Semiconductor

MOSFET N-CH 30V 8.5A SOT457

non-compliant

RQ6E085BNTCR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33350 -
6,000 $0.32200 -
16 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.4mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
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