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IMW120R140M1HXKSA1

IMW120R140M1HXKSA1

IMW120R140M1HXKSA1

SICFET N-CH 1.2KV 19A TO247-3

non-compliant

IMW120R140M1HXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $11.68000 $11.68
500 $11.5632 $5781.6
1000 $11.4464 $11446.4
1500 $11.3296 $16994.4
2000 $11.2128 $22425.6
2500 $11.096 $27740
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 182mOhm @ 6A, 18V
Vgs(th) (Max) @ Id 5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 800 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
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