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SISH536DN-T1-GE3

SISH536DN-T1-GE3

SISH536DN-T1-GE3

Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

non-compliant

SISH536DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.66000 $0.66
500 $0.6534 $326.7
1000 $0.6468 $646.8
1500 $0.6402 $960.3
2000 $0.6336 $1267.2
2500 $0.627 $1567.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 24.7A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.57W (Ta), 26.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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