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SIHB180N60E-GE3

SIHB180N60E-GE3

SIHB180N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A D2PAK

non-compliant

SIHB180N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.86000 $3.86
10 $3.46300 $34.63
100 $2.86130 $286.13
500 $2.34010 $1170.05
1,000 $1.99260 -
2,500 $1.89904 -
5,000 $1.83222 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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