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BSZ180P03NS3GATMA1

BSZ180P03NS3GATMA1

BSZ180P03NS3GATMA1

MOSFET P-CH 30V 9A/39.6A TSDSON

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BSZ180P03NS3GATMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
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