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RQ3C150BCTB

RQ3C150BCTB

RQ3C150BCTB

Rohm Semiconductor

MOSFET P-CHANNEL 20V 30A 8HSMT

non-compliant

RQ3C150BCTB Pricing & Ordering

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3,000 $0.41804 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 10 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
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