Welcome to ichome.com!

logo
Home

IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

MOSFET N-CH 60V 30A TO252-31

compliant

IPD30N06S4L23ATMA2 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.30608 -
5,000 $0.28497 -
12,500 $0.27442 -
25,000 $0.26866 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.