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GT105N10F

GT105N10F

GT105N10F

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

compliant

GT105N10F Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.47000 $1.47
500 $1.4553 $727.65
1000 $1.4406 $1440.6
1500 $1.4259 $2138.85
2000 $1.4112 $2822.4
2500 $1.3965 $3491.25
70 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 20.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
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