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SIHP11N80E-BE3

SIHP11N80E-BE3

SIHP11N80E-BE3

Vishay Siliconix

N-CHANNEL 800V

non-compliant

SIHP11N80E-BE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.70000 $3.7
500 $3.663 $1831.5
1000 $3.626 $3626
1500 $3.589 $5383.5
2000 $3.552 $7104
2500 $3.515 $8787.5
973 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 100 V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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