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PJQ4416EP_R2_00001

PJQ4416EP_R2_00001

PJQ4416EP_R2_00001

20V N-CHANNEL ENHANCEMENT MODE M

compliant

PJQ4416EP_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.58000 $0.58
500 $0.5742 $287.1
1000 $0.5684 $568.4
1500 $0.5626 $843.9
2000 $0.5568 $1113.6
2500 $0.551 $1377.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1117 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN3333-8
Package / Case 8-PowerVDFN
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