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DMTH10H015SPSQ-13

DMTH10H015SPSQ-13

DMTH10H015SPSQ-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

non-compliant

DMTH10H015SPSQ-13 Pricing & Ordering

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2,500 $0.63876 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 50.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2343 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8
Package / Case 8-PowerTDFN
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