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BSM300C12P3E301

BSM300C12P3E301

BSM300C12P3E301

Rohm Semiconductor

SICFET N-CH 1200V 300A MODULE

compliant

BSM300C12P3E301 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1028.57000 $1028.57
500 $1018.2843 $509142.15
1000 $1007.9986 $1007998.6
1500 $997.7129 $1496569.35
2000 $987.4272 $1974854.4
2500 $977.1415 $2442853.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 5.6V @ 80mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 10 V
FET Feature Standard
Power Dissipation (Max) 1360W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Supplier Device Package Module
Package / Case Module
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