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DMT10H015LFG-7

DMT10H015LFG-7

DMT10H015LFG-7

Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

non-compliant

DMT10H015LFG-7 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.52200 -
6,000 $0.49890 -
10,000 $0.48240 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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