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DMT10H9M9LCT

DMT10H9M9LCT

DMT10H9M9LCT

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO220AB T

compliant

DMT10H9M9LCT Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.23320 $1.2332
500 $1.220868 $610.434
1000 $1.208536 $1208.536
1500 $1.196204 $1794.306
2000 $1.183872 $2367.744
2500 $1.17154 $2928.85
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2309 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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