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IXTH2N150

IXTH2N150

IXTH2N150

IXYS

DISCMOSFET N-CH STD-HIVOLTAGE TO

compliant

IXTH2N150 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $10.80867 $10.80867
500 $10.7005833 $5350.29165
1000 $10.5924966 $10592.4966
1500 $10.4844099 $15726.61485
2000 $10.3763232 $20752.6464
2500 $10.2682365 $25670.59125
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 25 V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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