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PJQ1916_R1_00001

PJQ1916_R1_00001

PJQ1916_R1_00001

20V N-CHANNEL ENHANCEMENT MODE M

compliant

PJQ1916_R1_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.45000 $0.45
500 $0.4455 $222.75
1000 $0.441 $441
1500 $0.4365 $654.75
2000 $0.432 $864
2500 $0.4275 $1068.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 10 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1006-3
Package / Case 3-UFDFN
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