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DMG3415UFY4Q-7

DMG3415UFY4Q-7

DMG3415UFY4Q-7

Diodes Incorporated

MOSFET P-CH 16V 2.5A X2-DFN2015

compliant

DMG3415UFY4Q-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17631 -
6,000 $0.16669 -
15,000 $0.15706 -
30,000 $0.14551 -
75,000 $0.14070 -
113735 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 282 pF @ 10 V
FET Feature -
Power Dissipation (Max) 650mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN2015-3
Package / Case 3-XDFN
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