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SI8823EDB-T2-E1

SI8823EDB-T2-E1

SI8823EDB-T2-E1

Vishay Siliconix

MOSFET P-CH 20V 2.7A 4MICRO FOOT

SOT-23

non-compliant

SI8823EDB-T2-E1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.12179 -
6,000 $0.11441 -
15,000 $0.10702 -
30,000 $0.09817 -
75,000 $0.09448 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 10 V
FET Feature -
Power Dissipation (Max) 900mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (0.8x0.8)
Package / Case 4-XFBGA
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