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RD3S100AAFRATL

RD3S100AAFRATL

RD3S100AAFRATL

Rohm Semiconductor

MOSFET N-CH 190V 10A TO252

compliant

RD3S100AAFRATL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.10000 $3.1
500 $3.069 $1534.5
1000 $3.038 $3038
1500 $3.007 $4510.5
2000 $2.976 $5952
2500 $2.945 $7362.5
569 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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