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RFP8N18L

RFP8N18L

RFP8N18L

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

RFP8N18L Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.80000 $0.8
500 $0.792 $396
1000 $0.784 $784
1500 $0.776 $1164
2000 $0.768 $1536
2500 $0.76 $1900
3462 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 180 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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