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SUD19P06-60-GE3

SUD19P06-60-GE3

SUD19P06-60-GE3

Vishay Siliconix

MOSFET P-CH 60V 18.3A TO252

non-compliant

SUD19P06-60-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.55760 -
6,000 $0.53142 -
10,000 $0.51272 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 38.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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