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SIS780DN-T1-GE3

SIS780DN-T1-GE3

SIS780DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 18A PPAK1212-8

non-compliant

SIS780DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.26804 -
6,000 $0.25171 -
15,000 $0.23537 -
30,000 $0.22394 -
1 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 722 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 27.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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