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SQM40N10-30_GE3

SQM40N10-30_GE3

SQM40N10-30_GE3

Vishay Siliconix

MOSFET N-CH 100V 40A TO263

compliant

SQM40N10-30_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $1.14708 $917.664
1,600 $1.05270 -
2,400 $0.98010 -
5,600 $0.94380 -
18 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3345 pF @ 25 V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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