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DMN2013UFDE-7

DMN2013UFDE-7

DMN2013UFDE-7

Diodes Incorporated

MOSFET N-CH 20V 10.5A 6UDFN

compliant

DMN2013UFDE-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21527 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.8 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2453 pF @ 10 V
FET Feature -
Power Dissipation (Max) 660mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN
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