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SQM110P06-8M9L_GE3

SQM110P06-8M9L_GE3

SQM110P06-8M9L_GE3

Vishay Siliconix

MOSFET P-CH 60V 110A TO263

SOT-23

non-compliant

SQM110P06-8M9L_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $1.66848 $1334.784
1,600 $1.53120 -
2,400 $1.42560 -
5,600 $1.37280 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7450 pF @ 25 V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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