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R6530ENZ4C13

R6530ENZ4C13

R6530ENZ4C13

Rohm Semiconductor

650V 30A TO-247, LOW-NOISE POWER

non-compliant

R6530ENZ4C13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $7.18000 $7.18
500 $7.1082 $3554.1
1000 $7.0364 $7036.4
1500 $6.9646 $10446.9
2000 $6.8928 $13785.6
2500 $6.821 $17052.5
486 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 960µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 305W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247G
Package / Case TO-247-3
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