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SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 200A PPAK 8 X 8

non-compliant

SQJQ466E-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $1.32189 -
6,000 $1.27602 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10210 pF @ 25 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case PowerPAK® 8 x 8
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