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DMN2015UFDE-7

DMN2015UFDE-7

DMN2015UFDE-7

Diodes Incorporated

MOSFET N-CH 20V 10.5A 6UDFN

compliant

DMN2015UFDE-7 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21527 -
15 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.6 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1779 pF @ 10 V
FET Feature -
Power Dissipation (Max) 660mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN
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