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SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

non-compliant

SQJ886EP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.61221 -
6,000 $0.58347 -
15,000 $0.56294 -
1 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2922 pF @ 20 V
FET Feature -
Power Dissipation (Max) 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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